NSF Org: |
DMR Division Of Materials Research |
Recipient: |
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Initial Amendment Date: | May 2, 2016 |
Latest Amendment Date: | May 2, 2016 |
Award Number: | 1607935 |
Award Instrument: | Standard Grant |
Program Manager: |
James H. Edgar
DMR Division Of Materials Research MPS Direct For Mathematical & Physical Scien |
Start Date: | July 1, 2016 |
End Date: | June 30, 2021 (Estimated) |
Total Intended Award Amount: | $496,272.00 |
Total Awarded Amount to Date: | $496,272.00 |
Funds Obligated to Date: |
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History of Investigator: |
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Recipient Sponsored Research Office: |
4200 FIFTH AVENUE PITTSBURGH PA US 15260-0001 (412)624-7400 |
Sponsor Congressional District: |
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Primary Place of Performance: |
University Club Pittsburgh PA US 15213-2303 |
Primary Place of Performance Congressional District: |
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Unique Entity Identifier (UEI): |
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Parent UEI: |
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NSF Program(s): |
DMR SHORT TERM SUPPORT, ELECTRONIC/PHOTONIC MATERIALS |
Primary Program Source: |
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Program Reference Code(s): |
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Program Element Code(s): |
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Award Agency Code: | 4900 |
Fund Agency Code: | 4900 |
Assistance Listing Number(s): | 47.049 |
ABSTRACT
Non-technical description: As the number of electronic devices continues to increase, so does the need for energy to power these devices; therefore, decreasing computing power requirements could significantly impact global energy consumption. In this study, a novel device concept based on new materials is being explored to replace traditional silicon-based transistors, with the goal of lowering the operating power. Specifically, a new type of polymer electrolyte (i.e., ion conducting polymer) is designed to induce strain in a two-dimensional (2D) semiconductor when an electric field is applied. The 2D semiconductor has a thickness of only one molecule. The strain changes the electrical properties of the 2D semiconductor, which can then be sensed to perform logic operations. The change is predicted to occur at voltages lower than ones used in conventional transistors, and therefore the power required to operate the device is lower. In addition to applications in nanoelectronics, this research advances new materials for phase change devices that respond to electrical, chemical or strain stimuli, with potential application in brain-inspired computing, and artificial synapses. The postdoctoral scholar, graduate and undergraduate students who work on this project benefit from an interdisciplinary project that combines chemistry, polymer science, inorganic materials science and device physics with the goal of engineering low-power transistors. The research component provides educational case studies to be used in the classroom, and interdisciplinary training of postdocs, graduate and undergraduate students.
Technical Description: A new approach to strain 2D crystals is being explored using a field-effect transistor (FET) with a suspended MoTe2 channel for which the gate oxide is replaced by a custom-synthesized ionomer (i.e., single-ion conductor). Gate bias induces an electrostatic imbalance in the ionomer that strains the 2D crystal and induces a semiconducting to metallic phase change. The phase change is detected by the current-voltage characteristics of the FET, and is expected to occur at sub-volt gate bias with nanosecond switching times. This approach offers a gate control architecture that is similar to conventional CMOS architecture but with new materials and new physics. The research addresses both a fundamental and a practical challenge for dynamically controlling the phase behavior of 2D crystals. The fundamental challenge is achieving strain in 2D crystals that is sufficiently large to induce the phase transition; here, electrostatic control via ions is used to address this challenge. The practical challenge is building an electronic device that can exploit this phase-change property for low-power transistors, brain-inspired computing, or the development of artificial synapses.
PUBLICATIONS PRODUCED AS A RESULT OF THIS RESEARCH
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PROJECT OUTCOMES REPORT
Disclaimer
This Project Outcomes Report for the General Public is displayed verbatim as submitted by the Principal Investigator (PI) for this award. Any opinions, findings, and conclusions or recommendations expressed in this Report are those of the PI and do not necessarily reflect the views of the National Science Foundation; NSF has not approved or endorsed its content.
A single-ion conductor was synthesized and used to electrostatically gate suspended MoTe2 field-effect transistors (FETs). MoTe2 is a two-dimensional, layered material with in-plane bonds and no dangling bonds out of plane. MoTe2 is a particularly interesting 2D crystal because it can undergo a semiconducting (2H) to metallic (1T) phase transition when strained by only ~3%. That is, it behaves like a semiconducting material under no strain, and a good electrical conductor under a small amount of strain. The goal of this project was to use a single-ion conductor over a suspended MoTe2 channel to induce the 2H to 1T phase transition by field effect. The practical goal was to induce this transition to create a low-voltage switch.
Intellectual merit: This project made a fundamental contribution by reporting on the basic physics of using a single ion conductor as an electric double layer gate. In the first paper, (Xu et al., ACS Appl. Mater. Interfaces 2019, 11, 35879), we experimentally demonstrated that a custom synthesized, single-ion conductor can gate a supported MoTe2 FET to a similar extent as a dual-ion conductor, and used modeling to quantify the electrostatic imbalance that resulted. In the second paper (Woeppel, et al, ACS Appl. Mater. Interfaces 2020, 12, 36, 40850), we quantify the sheet density as 7 x 1013 ions/cm-2, which is the same order of magnitude as a dual ion conductor. We also showed the importance of having a large gate-to-channel size ratio when gating with a single ion conductor. An important (and as yet unpublished) outcome of this project is demonstrating the semiconducting (2H) to (1T) transition for a partially suspended MoTe2 FET using a combination of Raman spectroscopy and electrical measurements. This project also contributed fundamental insights into a polymerizable single-ion conductor (Arora, et al., ACS Materials Letters 2020, 2, 4, 331) and how this material can be used to lock a p-n junction (Liang, Materials 2020, 13, 1089).
Broader impacts: This work advanced fundamental understanding in the area of electrolyte-gated electronics. Ion-gating is a technique used by both the inorganic and organic semiconductor communities, and so insights gained here will be largely translatable to other communities. Moreover, this study showed a completely new approach to tune the electrolyte and to impart a new functionality (i.e., inducing the phase change). Although only part of the channel was transformed to a new phase (because it was only partially suspended to start with), this work demonstrated proof-of-concept for what could lead to a low-voltage switch; notably, the partial transition occurred at 2V which is the smallest voltage for a field-induced transition of MoTe2 that could be identified in the literature. This project contributed significantly to the PhD thesis of 2 students, the MS thesis of 1 student, and one undergraduate researcher (Woeppel) published a first-authored paper based on his work on this project. The PI participated in several K-12 outreach activities with demonstrations on various phases of materials and active learning about polymers. The students supported on this grant participated in outreach to high school students through the Pittsburgh Quantum Institute (PQI).
Last Modified: 10/17/2021
Modified by: Susan Fullerton
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